Method for forming capacitor in trench of semiconductor wafer by

Details Method for forming capacitor in trench of semiconductor wafer by Method for forming capacitor in trench of semiconductor wafer by

1990-01-23

1993-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437 38, 437919, 148DIG14, 148DIG106, 148DIG118, H01L 2170

Patent

active

051837757

ABSTRACT:
An improved process for formation of a capacitor in a trench formed in a semiconductor wafer is disclosed. The improved process comprises selectively implanting oxygen through the bottom surface of the trench into the region of the wafer adjacent the bottom surface of the trench and through the surfaces at the top corners of the trench into regions of the wafer adjacent such surfaces at the top corners of the trench using a plasma formed in a plasma-assisted etching apparatus while maintaining a high negative DC bias on the wafer being implanted. Subsequent growth of oxide on the surfaces of the trench will cause the implanted oxygen to form additional oxide in the implanted regions of the wafer adjacent the bottom surface of the trench and adjacent the surface at the top corners of the trench to compensate for the lower oxide growth rates in these areas.

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