Semiconductor device having a plurality of parallel drift region

Details Semiconductor device having a plurality of parallel drift region Semiconductor device having a plurality of parallel drift region

1997-01-21

2000-08-01

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257141, 257341, 257342, 257343, 257347, 257401, 257654, H01L 2994, H01L 29749

Patent

active

060970634

ABSTRACT:
A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compartment regions in which each of the compartment regions is positioned among the adjacent drift regions in parallel to make p-n junctions, respectively.

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patent: 5216275 (1993-06-01), Chen
patent: 5264719 (1993-11-01), Beasom
patent: 5294824 (1994-03-01), Okada
patent: 5438215 (1995-08-01), Tihanyi
"A Lateral COMFET Made in Thin Silicon-on-Insulator Film", Colinge et al, IEEE Electron Device Letters, vol. Edl-7, No. 12, Dec. 1986, pp. 697-699.
"The Pinch Rectifier: A Low-Forward-Drop High-Speed Power Diode", Baliga, IEEE Electron Device Letters, vol. Edl-5, No. 6, Jun. 1986, pp. 194-196.
"Comparison of Lateral and Vertical DMOS Specific On-Resistance", Amato et al, CH2252-5.85/0000-0736 S1.00 C 1985 IEEE, pp. 736-739.

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