Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1998-04-14

2000-08-01

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257797, H01L 27108

Patent

active

060970545

ABSTRACT:
In fabrication of a semiconductor memory device and especially a DRAM (dynamic random access memory) having an HSG-type stacked-capacitor structure, after a storage-node-forming silicon film has been surface-treated with an HSG preprocess using dilute fluoric acid, the storage-node-forming film on the sidewall surface of a storage-node-forming contact pattern at an accessory or alignment region is prevented from floating in the air and hence being peeled off, which would have lowered the yield. For this purpose, the storage-node-forming silicon film covers the sidewall surface of the contact pattern at the alignment region.

REFERENCES:
patent: 5604357 (1997-02-01), Hori
patent: 5705838 (1998-01-01), Jost et al.
patent: 5760434 (1998-06-01), Zahurak et al.

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