Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-30
2000-08-01
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 438 3, 438240, H01L 2978
Patent
active
060970472
ABSTRACT:
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
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Hallmark Jerald A.
Marshall Daniel S.
Ooms William J.
Duong Hung Van
Koch William E.
Motorola Inc.
Parker Lanny L.
Picard Leo P.
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