Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-11-06
1998-02-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 52, 257754, 257768, H01L 2900, H01L 2904, H01L 2348
Patent
active
057147957
ABSTRACT:
A semiconductor storage device capable of high-speed writing and reading and having extremely high reliability. The semiconductor device includes a plurality of cells each having a semiconductor layer between a pair of conductors. At least one of the pair of conductors is made of a metal and the semiconductor layer is made of a-Si which forms a silicide region having a width of 150 nm or less by silicide reacting with the metal at a reaction speed of 10 m/sec or higher. Alternatively, at least one of the pair of conductors is made of a metal which silicide reacts with a-Si to form a silicide region having a conical structure with a diameter of 150 nm or less. Otherwise, at least one among the pair of conductors is formed of a metal which forms a silicide region of 150 nm or less by reacting with a-Si. The interface between the semiconductor layer and the conductors is not exposed to an external oxygen containing atmosphere during processing so that no oxygen containing compound exists at this interface.
REFERENCES:
patent: 5381035 (1995-01-01), Chen et al.
patent: 5493147 (1996-02-01), Holzworth et al.
patent: 5543656 (1996-08-01), Yen et al.
patent: 5557136 (1996-09-01), Gordon et al.
Hirayama Masaki
Ohmi Tadahiro
Suzuki Hiroshi
Arroyo T. M.
Jackson Jerome
Ohmi Tadahiro
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