Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-31
1998-02-03
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257344, 257367, 257412, H01L 2978, H01L 27108
Patent
active
057147868
ABSTRACT:
An improved transistor structure includes an insulated conductive gate spacer which is contacted and driven separately from the gate of the transistor. The gate spacer serves as a control or second gate for the transistor and may be used throughout an integrated circuit or it may be preferred to use the improved transistor only in critical speed paths of an integrated circuit. Delays within circuits including the improved transistor are reduced since the drain voltage can be higher than VCC and the BVDSS and subthreshold voltage are substantially higher than standard LDD transistors. When the improved transistor is used selectively within an integrated circuit, the remaining devices can be structured as standard LDD transistors using the gate spacers in a conventional manner.
REFERENCES:
patent: 4213139 (1980-07-01), Rao
patent: 4319263 (1982-03-01), Rao
patent: 4472821 (1984-09-01), Mazin et al.
patent: 4975385 (1990-12-01), Beinglass et al.
patent: 5115288 (1992-05-01), Manley
patent: 5250450 (1993-10-01), Lee et al.
patent: 5252504 (1993-10-01), Lowrey et al.
patent: 5257238 (1993-10-01), Lee et al.
patent: 5292681 (1994-03-01), Lee et al.
patent: 5324960 (1994-06-01), Pfiester et al.
patent: 5397727 (1995-03-01), Lee et al.
patent: 5425392 (1995-06-01), Thakur et al.
patent: 5439835 (1995-08-01), Gonzalez
patent: 5495441 (1996-02-01), Hong
patent: 5513137 (1996-04-01), Lee et al.
Tiao-yuan Huang, William W. Yao, Russell A. Martin, Alan G. Lewis, Mitsumasa Koyanagi, & John Y. Chen, "A Novel Submicron LDD Transistor with Inverse-T Gate Structure", IDEM 1986, p. 742-745.
I. C. Chen, J. P. Lin, and C. W. Teng, Article from 1990 Symposium on VLSI Technology entitled: "A Highly Reliable 0.3 .mu.m N-channel MOSFET Using Poly Spacers", pp. 39-40.
Masataka Minami, Yasuo Sawahata, Hiroshi Matsuki and Takahiro Nagano, Article from 1990 Symposium on VLSI Technology entitled: "A High Speed & High Reality MOSFET Utilizing an Auxiliary Gate", pp.41-42.
F.-C. Hsu and K.-Y. Chiu, Article from IEEE Electron Device Letters, vol. EDL-5, No. 5, entitled: "Evaluation of LDD MOSFET's Based on Hot-Electron-Induced Degradation," May 1984, pp. 162-165.
Gonzalez Fernando
Kao David
Micro)n Technology, Inc.
Munson Gene M.
LandOfFree
Transistors having controlled conductive spacers, uses of such t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistors having controlled conductive spacers, uses of such t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistors having controlled conductive spacers, uses of such t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-665160