Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-10-25
2000-08-01
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438624, 438625, 438687, 438688, H01L 2144
Patent
active
060966491
ABSTRACT:
A process sequence used to form a gold wire bond, to an extended aluminum based structure, which in turn overlays a copper damascene structure, has been developed. The process features the creation of an extended aluminum based structure, used to accept the gold wire bond, thus reducing the risk of increased interface resistance, sometimes encountered when gold wire is directly bonded to copper. The process also features the creation of dummy aluminum based structures, used to increase the roughens of the surface topography, allowing improved adhesion between an overlying molding substance, used for passivation purposes, and the underlying semiconductor chip, to be realized.
REFERENCES:
patent: 5027188 (1991-06-01), Owada et al.
patent: 5561623 (1996-10-01), Ema
patent: 5563445 (1996-10-01), Iijima et al.
patent: 5616931 (1997-04-01), Nakamura et al.
patent: 5654589 (1997-08-01), Huang et al.
patent: 5659201 (1997-08-01), Wollesen
patent: 5659202 (1997-08-01), Ashida
patent: 5663599 (1997-09-01), Lur
patent: 5674781 (1997-10-01), Huang et al.
patent: 5677244 (1997-10-01), Venkatraman
patent: 5693563 (1997-12-01), Teong
patent: 5693568 (1997-12-01), Liu et al.
patent: 5702982 (1997-12-01), Lee et al.
patent: 5705849 (1998-01-01), Zheng et al.
patent: 5731624 (1998-03-01), Motsiff et al.
patent: 5736192 (1998-04-01), Okamoto
patent: 5785236 (1998-07-01), Cheung et al.
patent: 5883435 (1999-03-01), Geffken et al.
patent: 5900668 (1999-05-01), Woollesen
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5907788 (1999-05-01), Kasai
patent: 5936261 (1999-08-01), Ma et al.
patent: 5939788 (1999-08-01), McTeer
patent: 6020266 (2000-02-01), Hussein et al.
Ackerman Stephen B.
Gurley Lynne A.
Niebling John F.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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