Method of forming a local interconnect by conductive layer patte

Details Method of forming a local interconnect by conductive layer patte Method of forming a local interconnect by conductive layer patte

1998-04-07

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438233, 438621, 438651, 438655, 438683, H01L 214763

Patent

active

060966394

ABSTRACT:
A local interconnect (LI) structure is formed by forming a silicide layer in selected regions of a semiconductor structure then depositing an essentially uniform layer of transition or refractory metal overlying the semiconductor structure. The metal local interconnect is deposited without forming in intermediate insulating layer between the silicide and metal layers to define contact openings or vias. In some embodiments, titanium a suitable metal for formation of the local interconnect. Suitable selected regions for silicide layer formation include, for example, silicided source/drain (S/D) regions and silicided gate contact regions. The silicided regions form uniform structures for electrical coupling to underlying doped regions that are parts of one or more semiconductor devices. In integrated circuits in which an etchstop layer is desired for the patterning of the metal film, a first optional insulating layer is deposited prior to deposition of the metal film. In one example, the insulating layer is a silicon dioxide (oxide) layer that is typically less than 10 nm in thickness.

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