Silicon-on-insulator and CMOS-on-SOI double film fabrication pro

Details Silicon-on-insulator and CMOS-on-SOI double film fabrication pro Silicon-on-insulator and CMOS-on-SOI double film fabrication pro

1998-03-12

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438154, 438155, H01L 2100

Patent

active

060965843

ABSTRACT:
Silicon is formed at selected locations on a silicon-insulator (SOI) substrate during fabrication of selected electronic components, including resistors, capacitors, and diodes. The silicon location is defined using a patterned, removable mask, and the silicon may be applied by deposition or growth and may take the form of polysilicon or crystalline silicon. Electrostatic discharge (ESD) characteristics of the SOI device is significantly improved by having a thick double layer of silicon in selected regions.

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B. Davari, et al., IBM Technical Disclosure; Multiple Thickness Silicon on Insulator Films; vol. 34, No. 6, Nov., 1991; 264-265.

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