Method for operating an active matrix display device with limite

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

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438164, 438166, 438487, 117 10, 117 44, 148DIG92, 345 87, 345 90, 345 92, 345 98, 345205, H01L 2100, C30B 100, G09G 336

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active

060965819

ABSTRACT:
A method for operating an active matrix display device having an active matrix circuit, a column driver circuit and a scan driver circuit including driving the active matrix circuit by the column driver circuit and the scan driver circuit, wherein each of the active matrix circuit, column driver circuit and scan driver circuit includes by thin film transistors and wherein a variation in threshold voltages of the thin film transistors of the column driver circuit is not greater than 0.05 V.

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