Atomic layer etching

Details Atomic layer etching Atomic layer etching

1987-08-31

1988-07-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 156662, 156345, 20419235, 204298, 252 791, H01L 21306, B44C 122

Patent

active

047567945

ABSTRACT:
An apparatus, and method therefor, for removing a single atomic layer from he surface of a crystalline diamond. In a preferred embodiment, the apparatus comprises: a first delivery system for flooding the surface of the diamond with a pulse of nitrogen dioxide during a first phase of operation to cause a monolayer of nitrogen oxide to be adsorbed to the surface of the diamond; and a second delivery system for impacting the surface of the diamond with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation in order to remove a single atomic layer from the surface of the diamond. In a preferred method for removing a single atomic layer from the surface of a crystalline diamond, the method comprises the steps of: flooding the diamond surface with a pulse of nitrogen dioxide during the first phase of operation; and impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation in order to remove a single atomic layer from the surface of the diamond.

REFERENCES:
patent: 3563809 (1971-02-01), Wilson
patent: 4599135 (1986-07-01), Tsunekawa et al.

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