Method of forming pattern of a two-layer metal film

Details Method of forming pattern of a two-layer metal film Method of forming pattern of a two-layer metal film

1987-11-24

1989-10-03

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156648, 156654, 156656, 1566591, 156664, C23F 100

Patent

active

048714194

ABSTRACT:
A first metal film is formed on the major surface of a semiconductor substrate and a thin film which is at least equal in thickness to a second metal film is formed on the first metal film. These films are patterned to provide a two-layer film pattern of a prescribed configuration, and a resist film is coated on the major surface of the semiconductor substrate including the two-layer film pattern. The surface of the resist film is partially removed to expose a thin film pattern serving as an upper layer of the two-layer film pattern, and only the thin film pattern is removed. A second metal film is evaporated over the entire surface of the resist film including the first metal film pattern exposed in the preceding step and thereafter the resist film is removed with the second metal film formed on the same, to form the two-layer metal film pattern by the first metal film pattern and the second metal film pattern.

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