Method of forming dual field isolation structures

Details Method of forming dual field isolation structures Method of forming dual field isolation structures

1998-03-06

1999-10-12

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438225, 438297, 257509, 257647, H01L 2176

Patent

active

059666188

ABSTRACT:
A method of providing thick and thin oxide structures reduces step changes between a core region and a peripheral region on an integrated circuit. Thin LOCOS structures are provided in a core region of a flash memory device, and thick LOCOS structures are provided in a peripheral region of the flash memory device. The device and process are not as susceptible to "race track" problems, "oxide" bump problems, and "stringer" problems. The process utilizes two separate nitride or hard mask layers.

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