Method of forming resist pattern in a multilayer resist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430 5, 430325, 430967, G03C 1492

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active

054077826

ABSTRACT:
A multilayer photoresist includes an X-ray photoresist layer photosensitibe to X rays formed on a substrate, and a photoresist layer containing an X-ray absorbing agent formed on the X-ray photoresist layer. When the multilayer photoresist is selectively exposed to, for example, an I line (one spectrum), and developed, a mask to be used in the subsequent exposure to X rays is formed in the photoresist layer containing the X-ray absorbing agent. The X-ray photoresist layer on the substrate is then exposed to X rays by using the mask formed in the photoresist layer, and is developed, a resist pattern is obtained.

REFERENCES:
patent: 4515876 (1985-05-01), Yoshihara et al.
patent: 4634643 (1987-01-01), Suzuki
E. Cullmann et al., "Experimental results with a scanning stepper for synchrotronbased x-ray lithography," Journal of Vacuum Science and Technology, vol. B6, Nov./Dec. 1988 p. 2132.
A. N. Broers, "Fine-Line Lithography," Microelectronic Materials and Processes, 1989, Chapter 9.
Book of Semi Standards 1986, vol. 5, Semiconductor Equipment and Materials Institute, Inc.
H. Kinoshita et al., "Soft x-ray reduction lithography using multilayer mirrors," Digest of Papers 1991 4th MicroProcess Conference, Jul. 15-18, 1992, Kanazawa, Japan.

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