Method for making sub-lithographic images by etching the interse

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566561, 216 58, 216 72, 216 83, 437228, H01L 213105

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active

057140391

ABSTRACT:
A method of forming a sub-lithographic image formed by the intersection of two spacers. A substrate with a first pattern of selectively etchable material with sidewalls that are substantially vertical is provided. A first sidewall spacer is formed of a material that is selectively etchable relative to the first pattern material. A second pattern of a selectively etchable material is formed with the second pattern intersecting the first pattern. The sidewalls of the second pattern are substantially vertical as well. A second sidewall spacer is formed of a material that is selectively etchable relative to the second pattern material. The second pattern material is etched to leave the second sidewall spacer. Alternatively, the first and/or second pattern materials may be totally removed, left in place, or planarized.

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Miller, "High Density, Planar Metal Lands" IBM Tech. Discl. Bull. vol. 23, No. 6, pp. 2270-2276, Nov. 1980.
Trump, "Process for Structuring a Submicron Mask", IBM Technical Disclosure Bulletin, V27 N5, Oct. 1984, pp. 3090-3091.
Barson, et al., "High Density Planar Metal Lands", IBM Technical Disclosure Bulletin, V24 N2, Jul. 1981, pp. 1296-1299.

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