Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-17
1999-10-12
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257350, 257500, H01L 2976, H01L 2701, H01L 2900, H01L 2994
Patent
active
059659211
ABSTRACT:
In an integrated circuit type semiconductor device consisting of MISFETs, high rated voltage characteristic is obtained in a gate insulation film structure of a thin film. Further, a reduction in the manufacturing cost of semiconductor devices including high-rated voltage and low rated voltage MISFETs. An intermediate gate electrode is provided which overlies a channel formation region and a gate region with the same gate insulation film being sandwiched therebetween. The gate region is provided on the surface of a substrate. The channel formation region has an impedance indirectly controllable via the intermediate gate electrode upon application of a voltage to the gate region. The intermediate gate electrode is provided with a voltage reset(set) means connected thereto for eliminating the occurrence of charge-up.
REFERENCES:
patent: 4488351 (1984-12-01), Momose
patent: 4509070 (1985-04-01), Furumura
patent: 5635749 (1997-06-01), Hong
Fahmy Wael M.
Seiko Instruments Inc.
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