Semiconductor device including field effect transistor

Details Semiconductor device including field effect transistor Semiconductor device including field effect transistor

1999-03-18

1999-10-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257638, 257645, 257651, H01L 2701, H01L 2358

Patent

active

059659181

ABSTRACT:
An insulating film having a low dielectric constant lower than that of silicon oxide is arranged between a silicon support layer and a silicon active layer. A channel region, source/drain regions, and a device isolation region are formed in the active layer. A gate electrode is arranged on the channel region through a gate insulating film. The active layer is covered with a TEOS film in which contact holes are formed. The contact holes are filled with wiring layers connected to the source/drain regions and the gate electrode.

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patent: 5866932 (1999-02-01), Yamazaki et al.
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S. Polchlopek et al., "Properties of Nitrogen-Implanted SOI Substrates", IEEE Transactions on Electron Devices, 40 (2):385-391 (1993).
G. Virdi et al., "Effect of Flurine-ion Implantation on Buried Nitride Silicon-on-Insulator Structures", Appl. Phys. Lett., 60(4):492-494, (1992).
M. Bruel et al., "Smart Cut": A Promising New SOI Material Technology, Proceedings 1995 IEEE Internaitonal SOI Conference, pp. 178-179, (1995).
Takagi et al., "Mobility Enhancement of SOI MOSFETS Due to Subband Modulaiton in Ultra-Thin SOI Films", Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials, pp. 154-155, (1997).

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