Semiconductor device comprising projecting contact layers

Details Semiconductor device comprising projecting contact layers Semiconductor device comprising projecting contact layers

1977-06-22

1980-02-19

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29578, 29580, 156649, 156657, 156662, H01L 21308

Patent

active

041893425

ABSTRACT:
A microwave semiconductor device, for example, Gunn effect devices, avalanche diodes and varactors, having a mesa-like semiconductor body which is provided on both sides with respective grown metal contact layers. The upper side of the semiconductor body is provided with a beam lead which projects from the upper side. The metal contact layer of lower side of the semiconductor body is a grown heat sink or, as in the varactors, a beam lead.

REFERENCES:
patent: 3566214 (1971-02-01), Usuda
patent: 3775200 (1973-11-01), de Nobel et al.
patent: 3986142 (1976-10-01), Kim
Handbook of Chemistry and Physics, Chemical Rubber Co., Cleveland, Ohio, 48th Ed. (1967), pp. 179, 204, 219.

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