Read circuit for memory

Static information storage and retrieval – Read/write circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365204, 365185, G11C 700

Patent

active

048962988

ABSTRACT:
A read circuit is disclosed for logic circuit type integrated circuits comprising a memory consisting of a matrix of memory cells. The memory cells are each addressable by rows and columns selected by row and column decoders. The read circuit, which is connected to the memory cells by a line called a bit line, comprises a pre-loading circuit for the bit line and a detection circuit that detects the discharging or non-discharging of the bit line depending on whether the memory cell selected is in the state "0" or "1", and also comprises a means to memorize the state that is read. The circuit further comprises means which make it possible, in read mode, to discharge the bit line regardless of whether the memory cell is in the state "1" or "0" and means that delay the moment of discharge. The invention can be applied to EPROMs or similar memories.

REFERENCES:
patent: 4475178 (1984-10-01), Kinoshita
patent: 4545038 (1985-10-01), Bellay et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Read circuit for memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read circuit for memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read circuit for memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-649155

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.