Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1988-06-09
1990-01-23
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Capacitors
365182, 357 236, 357 55, 357 51, 357 49, G11C 1124, G11C 1134, H01L 2978, G03B 2752
Patent
active
048962937
ABSTRACT:
A dynamic random access memory cell has a storage capacitor and an access transistor formed on only one sidewall of a trench etched into the face of a semiconductor bar. The storage capacitor uses the sidewall of the trench as the storage node, and uses a polysilicon plug as a common node. This polysilicon plug is part of a plate that extends along the face in the trench for a column of like cells, functioning to provide field-plate type of isolation between capacitors along the trench. The channel of the access transistor is formed in the upper part of the one sidewall of the trench, using an upper edge of the capacitor storage node as the source region of the transistor and having a buried N+ drain region on the face at the top. The capacitor areas are isolated from one another on opposite sidewalls, so an array can be laid out that has two cells per bit, to provide improved alpha particle immunity, or by using two wordlines per row a true crosspoint array is possible, providing higher density.
REFERENCES:
patent: 4571558 (1988-07-01), Kenney
patent: 4574207 (1986-03-01), Benjamin et al.
patent: 4646118 (1987-02-01), Takemae
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4752819 (1988-06-01), Koyama
patent: 4763180 (1988-08-01), Hwang et al.
patent: 4786954 (1988-11-01), Morie et al.
patent: 4792834 (1988-12-01), Uchida
patent: 4797719 (1989-01-01), Ueda
Hecker Stuart N.
Koval Melissa J.
Lindgren Theodore D.
Texas Instruments Incorporated
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