Process and apparatus for controlling the reactive deposit of co

Details Process and apparatus for controlling the reactive deposit of co Process and apparatus for controlling the reactive deposit of co

1989-03-20

1990-01-23

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 204298, C23C 1434

Patent

active

048956317

ABSTRACT:
A reaction gas is admitted in the immediate vicinity of a target on the cathode and a plasma is generated between the target and a substrate to be coated. The intensity of the spectral line of a target material is measured, and is used to provide a first signal with a relatively short time constant to a controller via a first control circuit. A property of the finished coating is sensed after the substrate leaves the coating zone, and is used to provide a second signal with a relatively long time constant to the controller via a second control circuit. The controller uses the combined signals to regulate the admission of the reaction gas so that a pre-established property of the finished coating is kept substantially constant.

REFERENCES:
patent: 4166784 (1979-09-01), Chapin et al.
patent: 4362936 (1982-12-01), Hoffmann et al.
patent: 4407709 (1983-10-01), Enjouji et al.
patent: 4428811 (1984-01-01), Sproul et al.

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