Vertical field-effect transistor and a semiconductor memory cell

Static information storage and retrieval – Systems using particular element – Semiconductive

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365188, 257381, 257904, 257380, 437 52, H01L 2170, H01L 2700

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active

054167361

ABSTRACT:
The disclosure includes a vertical field-effect transistor (115) with a laterally recessed channel region (92), a vertical field-effect transistor (116) having a graded diffusion junction (31), a static random access memory cell (110) having a vertical n-channel field-effect transistor (116) and a vertical p-channel field-effect transistor (115) and methods of forming them. In one embodiment, a six-transistor static random access memory cell (110) has two pass transistors (111 and 114), which are planar n-channel field-effect transistors, two latch transistors (113 and 116), which are vertical n-channel field-effect transistors with drain regions having graded diffusion junctions (31), and two load transistors (112 and 115), which are vertical p-channel thin-film field-effect transistors having laterally recessed channel regions (92).

REFERENCES:
patent: 4014714 (1977-03-01), Murrmann et al.
patent: 4187125 (1980-02-01), Feist
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4554572 (1985-11-01), Chatterjee
patent: 4713678 (1987-12-01), Womack et al.
patent: 4845537 (1989-07-01), Nishimura et al.
patent: 4864374 (1989-09-01), Banerjee
patent: 4967257 (1990-10-01), Inoue
patent: 4980732 (1990-12-01), Okazawa
patent: 4982266 (1991-01-01), Chatterjee
patent: 4987090 (1991-01-01), Hsu et al.
patent: 5010386 (1991-04-01), Groover, III
patent: 5021355 (1991-06-01), Dhong et al.
patent: 5057444 (1991-10-01), Fuse et al.
patent: 5072276 (1991-12-01), Malhi et al.
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5082795 (1992-01-01), Temple
patent: 5122846 (1992-06-01), Haken
patent: 5198683 (1993-03-01), Sivan
patent: 5229310 (1993-07-01), Sivan
patent: 5308782 (1994-05-01), Mazure et al.
patent: 5364810 (1994-11-01), Kosa et al.
Richardson, e al.; "A Trench Transistor Cross-Point DRAM Cell;" IEDM; pp.714-717 (1985).
Eklund, et al.; "A 0.5-.mu.m BiCMOS Technology for Logic and 4Mbit-class SRAM's;" IEDM; pp. 425-428 (1989).

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