Method and structure for passivating a semiconductor device

Details Method and structure for passivating a semiconductor device Method and structure for passivating a semiconductor device

1979-04-16

1980-09-23

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 2, 357 91, H01L 2126, H01L 21265

Patent

active

042240840

ABSTRACT:
A method of passivating a silicon semiconductor device having at least one active component disposed in a crystalline region thereof comprises the steps of bombarding a surface of the crystalline region with ions to convert a part of the region adjacent the surface into an amorphous layer of graded crystallinity, and then exposing the amorphous layer to atomic hydrogen, whereby an integral layer of hydrogenated amorphous silicon is formed adjacent the crystalline region.

REFERENCES:
patent: 3390011 (1968-06-01), Brown et al.
patent: 3859127 (1975-01-01), Lehner
patent: 3943014 (1976-03-01), Yoshizawa
patent: 4013485 (1977-03-01), Ma et al.
patent: 4113514 (1978-09-01), Pankove et al.
Malhotra et al., "Effects of H . . . in Amorphous Si", Appl. Phys. Letts. 28, (1976), 47.
Brodsky et al., "Hydrogenation . . . S/C Devices . . . ", IBM-TDB, 20 (Apr. 1978), 4962.
Csepregi et al., "Reordering-Amorphous Layers . . . ", Jour. Appl. Phys. 48, (1977), 4234.
Bourgoin et al., ". . . Amorphous Layer . . . in Si . . . ", Rad. Effects, 22, (1974), 205.
Golanski et al., ". . . Si Bombarded . . . Si.sup.++ Ions", Rad. Effects, 25, (1975), 213.
Beanland, ". . . B Molecular Implants into Si", in Ion Implantations in S/C, 1976 ed. Chernov et al., Plenum, p. 31.
Johansen et al., ". . . Si . . . Bombardment with Ne.sup.+ & P.sup.+ Ions", Rad. Effects 2, (1969), p. 19.
Appelbaum et al., "Hydrogen . . . on Si . . . ", Phys. Rev. Letts., 39, (1977), 1487.
Pankove et al., ". . . Hydrogenated Amorphous Si", Appl. Phys. Letts., 31, (1977), 450.
Yasaitis, "Ion-Implantation . . . Amorphous Isolation", Electronics Letts., 14, (Jul. 1978), 460.
Tokuyama et al., ". . . Disorders in . . . Implanted Si", Jap. Jour. Appl. Phys., 17, (Aug. 1978), 1301.
Gerasimenko et al., "Inhomogeneity . . . Amorphous Layer . . . ", Sov. Phys. Semicond., 11, (1977), 108.
Hofker et al., ". . . B Implantations in Amorphous . . . Si", Rad. Effects, 24, (1975), 223.

Affiliated with

Also associated with

Rating

Method and structure for passivating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for passivating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for passivating a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-642913