Nonvolatile integrated circuit memories having separate read/wri

Details Nonvolatile integrated circuit memories having separate read/wri Nonvolatile integrated circuit memories having separate read/wri

1996-05-24

1998-04-14

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular connection

365 51, 365 63, 36518517, 36518523, 36518901, G11C 700

Patent

active

057401071

ABSTRACT:
A nonvolatile integrated circuit memory includes an array of rows and columns of memory cells, with each memory cell includes a transistor having a floating gate and a control gate. The array of memory cells is divided into a plurality of memory cell strings, with the transistors in the memory cell string being serially connected. The memory also includes a plurality of word lines, a respective one of which is connected to the respective memory cell transistors in a row. Word line drivers are connected to the plurality of word lines. The word line drivers include a first word line read connection path to provide a read driving voltage to the word lines during a read operation, and a second word line write connection path to provide a write driving voltage to the word lines during a write operation. Voltages in the read path are reduced compared to voltages in a common word line read/write connection path.

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