Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-08-21
1998-04-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, H01L 29788
Patent
active
057395691
ABSTRACT:
A non-volatile memory cell structure capable of being programmed by band-to-band tunneling induced substrate hot electron injection is formed in a semiconductor substrate 8 and comprises first 10 and second 12 highly doped regions separated by a channel region 14. A nitride layer 16, such as silicon nitride for example, is formed over the channel region 14. An oxide layer 18, such as silicon dioxide, is then formed over nitride layer. The oxide
itride layer serves as the floating gate insulator. In another embodiment, an additional oxide layer 15 may be formed between the channel region 14 and the nitride layer 16. The floating gate 20 is formed over the oxide layer 16 and a control gate 24 is insulatively formed over the floating gate 20. Other variations, advantages and a fabrication method are also disclosed.
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Brady III W. James
Donaldson Richard L.
Houston Kay
Jackson Jerome
Texas Instruments Incorporated
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