Semiconductor device and manufacturing process therefor

Details Semiconductor device and manufacturing process therefor Semiconductor device and manufacturing process therefor

1994-12-28

1998-04-14

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257534, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

057395659

ABSTRACT:
A semiconductor device with holes of porous texture in a part of the surface of a semiconductor substrate. The holes are filled with a conductive material across an insulating layer.

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patent: 5278437 (1994-01-01), Wakamiya et al.
Appl. Phys. Let. vol. 24, No. 4, Feb. 1983, pp. 386-388, Holmstorm et al., "Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon."
J. Electrochem. Soc., vol. 127, No. 2, Feb. 1980, pp. 476-483, Unagami, "Formation Mechanism of Porous Silicon Layer etc" Bell Tech. J., vol. 35, 1956, pp. 333-347, Uhlir, Jr. Electrolytic Shaping of Germanium and Silicon.

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