Structure of a high voltage transistor in a semiconductor device

Details Structure of a high voltage transistor in a semiconductor device Structure of a high voltage transistor in a semiconductor device

1996-07-02

1997-07-29

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257395, 257396, 257397, 257398, 257399, 257488, 437 41, 437 80, 437228, 437984, 148DIG143, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056524587

ABSTRACT:
The present invention discloses a structure of a transistor in a semiconductor device and a method of manufacturing the same.
The present invention manufactures a high voltage transistor by etching a silicon substrate to a depth deeper than that of the field oxide film by a self-aligned wet etching process using the field oxide film as a mask and, thereafter, by forming the first gate electrode which electrically switches ON and OFF between the source region and the drain region by using a gate electrode mask and simultaneously forming a second gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film.
Accordingly, the present invention can improve the degree of integration of the device by forming a gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film.

REFERENCES:
patent: 5200351 (1993-04-01), Hadijizadeh-Amini

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