Integrated structure circuit for the protection of power devices

Details Integrated structure circuit for the protection of power devices Integrated structure circuit for the protection of power devices

1994-05-11

1997-07-29

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257361, 257362, 257363, H01L 2362

Patent

active

056524552

ABSTRACT:
An integrated structure protection circuit suitable for protecting a power device against overvoltages comprises a plurality of serially connected junction diodes, each having a first electrode, represented by a highly doped region of a first conductivity type, and a second electrode represented by a medium doped or low doped region of a second conductivity type. A first diode of said plurality has its first electrode connected to a gate layer of said power device and its second electrode connected to the second electrode of at least one second diode of said plurality, and said at least one second diode has its first electrode connected to a drain region of the power device. The doping level of the second electrode of the diodes of said plurality is suitable to achieve sufficiently high breakdown voltage values.

REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
patent: 5162966 (1992-11-01), Fujihira
patent: 5401996 (1995-03-01), Kelly

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