Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-03
1997-07-29
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257351, 257488, 257507, H01L 2701, H01L 2712, H01L 2358, H01L 2900
Patent
active
056524544
ABSTRACT:
According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
REFERENCES:
patent: 4478655 (1984-10-01), Nagakubo et al.
patent: 4696092 (1987-09-01), Doering et al.
patent: 5164326 (1992-11-01), Foerstner et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.
A High Speed And Low Power Consumption 16 K Gate Gate Array On Ultra Thin SOI Film, Institute of Electronics, Information and Communication Engineers of Japan, Y. Yamaguchi et al., pp. 81-86, 1992.
Inoue Yasuo
Iwamatsu Toshiaki
Nishimura Tadashi
Yamaguchi Yasuo
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