Semiconductor device with a semiconductor layer formed on an ins

Details Semiconductor device with a semiconductor layer formed on an ins Semiconductor device with a semiconductor layer formed on an ins

1995-11-14

1997-07-29

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257354, 257623, H01L 2701

Patent

active

056524536

ABSTRACT:
A semiconductor device which can prevent formation of a parasitic transistor and degradation in its threshold voltage is obtained. In the semiconductor device, a sidewall insulating film the width of which is increased toward its lower portion is formed on a side wall of a semiconductor layer, and a gate electrode layer is formed such that it extends on the semiconductor layer and the sidewall insulating film.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 4807013 (1989-02-01), Manocha
patent: 4956307 (1990-09-01), Pollack et al.
patent: 5023197 (1991-06-01), Haond et al.
patent: 5039621 (1991-08-01), Pollack
patent: 5089870 (1992-02-01), Haond
Electronics Letters 18th Aug. 1983 vol. 19,No. 17, pp. 684 et seq.

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