Semiconductor device with pluralities of gate electrodes

Details Semiconductor device with pluralities of gate electrodes Semiconductor device with pluralities of gate electrodes

1996-02-02

1997-07-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257365, 257366, 257401, H01L 2976

Patent

active

056524528

ABSTRACT:
A semiconductor device has a structure in which pluralities of gate electrodes, drain electrodes, and source electrodes extend in parallel to each another. The semiconductor device includes at least one isolation area formed in a direction perpendicular to at least one gate electrode so as to separate one active layer area formed on a semiconductor substrate into a plurality of active layer areas. The at least one gate electrode is connected to each of the plurality of active layer areas separated by the at least one isolation area.

REFERENCES:
patent: 3586930 (1971-06-01), Das et al.
patent: 4462041 (1984-07-01), Glenn
patent: 5321291 (1994-06-01), Redwine
patent: 5321292 (1994-06-01), Gongwer
patent: 5528056 (1996-06-01), Shimada et al.
patent: 5528065 (1996-06-01), Bahersby et al.
patent: 5563439 (1996-10-01), Chung et al.
"GaAs Microwave Power FET"; Fukuta et al; IEEE Transactions on Electron Devices, vol. ED-23, o. 4, Apr. 1976; pp. 388-394.

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