Semiconductor memory device with improved capacitor

Details Semiconductor memory device with improved capacitor Semiconductor memory device with improved capacitor

1995-09-20

1997-07-29

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257306, 257308, 257311, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

056524463

ABSTRACT:
There is provided a semiconductor device, including: a semiconductor substrate having a major surface; a first insulating film formed on the major surface of the semiconductor substrate; a plurality of first conductive members spaced apart from each other on the first insulating film and formed to be connected to the semiconductor substrate; a plurality of storage electrodes formed on the first insulating film at positions respectively corresponding to the first conductive members; a plurality of high-permittivity films respectively stacked on the plurality of storage electrodes; a plurality of first counter electrodes respectively stacked on the plurality of high-permittivity films; a second insulating film, having a permittivity much lower than a permittivity of each of the high-permittivity films, for insulating the first conductive members, the high-permittivity films, and the first counter electrodes, respectively; and a second counter electrode, formed on the second insulating film, for connecting adjacent first counter electrodes on an upper surface of the second counter electrode, and a method of manufacturing the semiconductor device.

REFERENCES:
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5366920 (1994-11-01), Yamamichi et al.
patent: 5436477 (1995-08-01), Hashizume et al.
Koyama et al., "A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 for 256M DRAM", IEDM Technical Digest, 1991, pp. 823-826.

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