Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1995-02-24
1998-04-14
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
118 50, 118723R, 118723VE, 427250, 4272552, 427294, 427404, 4274197, 427585, 428457, 428698, 428699, 428704, H05H 124
Patent
active
057389179
ABSTRACT:
A single chamber of a vapor deposition system is used to deposit both Ti and TiN. A Ti layer is deposited on the sample using a noncollimated process. N.sub.2 gas is then introduced in the chamber. A TiN layer is then deposited over the Ti layer. A second Ti layer is deposited over the TiN layer. A separate Ti pasting of a TiN chamber is eliminated, thereby increasing throughput. Further, only three physical vapor deposition chambers are used, thereby allowing the fourth chamber to be used for other metal deposition. Moreover, the second Ti layer eliminates the first wafer effect and reduces sheet resistance relative to a same chamber Ti/TiN underlayer. Lastly, the Al deposited on this new stack has a stronger <111> crystallographic texture, which leads to better electromigration resistance.
REFERENCES:
patent: 4823182 (1989-04-01), Okumura
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5290731 (1994-03-01), Sugano et al.
patent: 5317187 (1994-05-01), Hindman et al.
patent: 5371042 (1994-12-01), Ong
patent: 5380678 (1995-01-01), Yu et al.
patent: 5385867 (1995-01-01), Ueda et al.
patent: 5418388 (1995-05-01), Okudaira et al.
patent: 5543357 (1996-08-01), Yamada et al.
Shih, et al., "Ti/Ti-N Hf/Hf-N and W/W-N Multilayer Films with High Mechanical Hardness", Applied Physics Letters, vol. 61, No. 6, 10 Aug. 1992, pp. 654-656.
Massiani, et al., "Effect of a Titanium Underlayer on the Corrosion Behaviour of Physically Vapour Deposited Titanium Nitride Films", Thin Solid Films, vol. 217, No. 1/02, 30 Sep. 1992, pp. 31-37.
Wendt, H. et al., "Process Integration for Barrier Layers and A1-Alloys using a Sputtering Cluster Tool", Microelectronic Engineering, vol. 19 pp. 371-374, 1992. (No month avail.).
Maheo, et al., "Microstructure and Electrical Resistivity of TiN Films Deposited on Heated and Negatively Biased Silicon Substrates", Thin Solid Films, vol. 237, No. 1/02, 1 Jan. 1994, pp. 78-86.
Hultman, et al., "Interfacial Reactions in Single-Crystal-TiN(100)/A1/Polycrystalline-TiN Multilayer Thin Films", Thin Solid Films, vol. 215, No. 2, 14 Aug. 1992, pp. 152-161.
Joshi, et al., "Collimated Sputtering of TiN/Ti Liners into Sub-Half-Micrometer High Aspect Ratio Contacts/Lines", Applied Physics Letters, vol. 61, No. 21, 23 Nov. 1992, pp. 2613-2615.
Besser Paul R.
Tran Khanh Q.
Advanced Micro Devices , Inc.
Kwok Edward C.
Pianalto Bernard
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