Ion-implanted resist removal method

Details Ion-implanted resist removal method Ion-implanted resist removal method

1996-03-06

1997-07-29

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566541, 1566431, 216 49, 216 83, 216 58, H01L 21306, B05D 512, B44C 122

Patent

active

056518609

ABSTRACT:
A method of removing a resist layer formed on a substrate wherein the resist layer includes an ion-implanted upper region. The method includes hydrogenating the ion implanted upper region of the resist layer resulting in the hydrogenated ion-implanted upper region. The resist layer, including the hydrogenated ion-implanted upper region is then removed. A hydrogenation of the ion-implanted upper region may be performed by immersing the resist layer, including the ion-implanted upper region, into pressurized boiling water, and/or treating the ion-implanted upper region with pressurized water vapor.

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Ohmura et al., "Enhanced hydrogenation and acceptor passivation Si by pressurized water boiling," Appl. Phys. Lett., 67(1), 64-66 (1995).
Rotondaro et al., "A Semi-Quantitative Method for Studying Photoresist Stripping," IMEC, Lab Chem. Biolog., Belgium, 6 pp. (undated).

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