Semiconductor device having bipolar transistor and MOS transisto

Details Semiconductor device having bipolar transistor and MOS transisto Semiconductor device having bipolar transistor and MOS transisto

1994-09-20

1996-04-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 52, 257197, 257 65, 257616, H01L 2702, H01L 29161

Patent

active

055127720

ABSTRACT:
A semiconductor device of this invention includes a bipolar transistor and MOS transistors which are formed on the same semiconductor substrate. The bipolar transistor is hetero-bipolar transistor having a hetero junction. The hetero-bipolar transistor is a bipolar transistor of double-hetero structure in which a material used for forming the base region thereof has a band gap narrower than a material used for forming the emitter and collector regions thereof.

REFERENCES:
patent: 5399894 (1995-03-01), Maeda et al.

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