MOSFET device structure three spaced-apart deep boron implanted

Details MOSFET device structure three spaced-apart deep boron implanted MOSFET device structure three spaced-apart deep boron implanted

1995-04-24

1996-04-30

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257611, 257263, 257408, 257394, 257344, 257336, H01L 29167, H01L 29207, H01L 29227, H01L 310288

Patent

active

055127703

ABSTRACT:
This invention describes a device structure and a method of forming the device structure using a polysilicon spacer formed on the edges of the gate electrode forming a gate structure with a cavity. The channel area is self aligned through this cavity. A fully overlapped Lightly-Doped-Drain structure is used to improve device characteristics for submicron devices. A deep boron implant region, self aligned through the gate structure, is used to improve punch through voltage.

REFERENCES:
patent: 4864382 (1989-09-01), Aoki et al.
patent: 5428234 (1995-06-01), Sumi

Affiliated with

Also associated with

Rating

MOSFET device structure three spaced-apart deep boron implanted does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOSFET device structure three spaced-apart deep boron implanted , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET device structure three spaced-apart deep boron implanted will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-630789