Method for forming a single crystal silicon layer

Details Method for forming a single crystal silicon layer Method for forming a single crystal silicon layer

1983-08-25

1986-03-25

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 108

Patent

active

045781443

ABSTRACT:
Disclosed herein is a process for forming a singlecrystalline silicon layer by heating a wafer having a starting silicon layer of amorphous or polycrystalline silicon on the singlecrystalline silicon substrate, in accordance with the epitaxial growth technique. The process comprises providing a heat source comprising a plurality of tubular lamps provided in a parallel second plane above a first plane in which the wafer is placed; lighting the tubular lamps to radiate their light to the wafer so as to hold the starting silicon layer at 1100.degree.-1400.degree. C. for 4 seconds or longer; and then, radiating light from a specific lamp to a portion of the starting silicon layer of the wafer where the temperature of the portion of the starting silicon layer is raised to 1410.degree.-1480.degree. C. and to form a narrow molten region and forming the same narrow molten regions successively one after another in the wafer. The above process can convert the starting silicon layer to a singlecrystalline silicon layer in a relatively short period of time and without danger of damaging the wafer.

REFERENCES:
patent: 2933384 (1960-04-01), Walker et al.
patent: 3630684 (1971-12-01), Keller
patent: 4081313 (1978-03-01), McNeilly et al.

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