Ion implantation method

Details Ion implantation method Ion implantation method

1988-04-29

1989-10-31

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

2504922, G21K 510

Patent

active

048779628

ABSTRACT:
An ion implantation method for a substrate of (100) silicon is disclosed in which the implantation is performed on a substrate which is tilted with respect to an incident ion beam and is rotated in its own plane by 15.degree. to 75.degree. from a position in which the (110) crystal planes of the silicon would be aligned with the incident ion beam. The substrate is then rotated in its own plane by 90.degree., 180.degree., and 270.degree. from its initial position and ion implantation is performed at each position using the same dose of ions. The initial angle of rotation is preferably about 45.degree..

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patent: 4733087 (1988-03-01), Narita et al.
patent: 4733091 (1988-03-01), Robinson et al.
patent: 4745287 (1988-05-01), Turner
Turner et al., "Recent Ion-Implantation Apparatus Using Surface Channeling Effect", Solid State Technology, May 1985, pp. 75-86.
Ohsaki et al., "Oblique-Rotate Ion Implantation Technique and Its Application to VLSI Devices", pp. 97-102.
"A Three-Axis Goniometer for Channeling Experiments", Knox, Nu. Ins. and Methods, No. 1, 1970, pp. 202-204.

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