Plasma etching of polyimide

Details Plasma etching of polyimide Plasma etching of polyimide

1981-12-30

1982-11-02

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156651, 1566591, 156668, 134 1, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

043572030

ABSTRACT:
An improvement in the formation of multilayer metallization systems wherein vias are formed in a dielectric insulating layer of polyimide which overlies a layer of metal such as aluminum. In accordance with the invention, the residual film remaining after oxygen plasma etching of the polyimide is efficiently removed by a second plasma etching utilizing a mixture of argon and hydrogen.

REFERENCES:
patent: 4278493 (1981-07-01), Petvai
Rhodes, Semiconductor International, Mar. 1981, pp. 65-68 & 70.
Miller, Circuits Manufacturing, Apr., 1977.
Vossen et al., J. of Vac. Sci. Tech., vol. 11, No. 1, Jan./Feb. 1974, pp. 60-70.
O'Neill, Semiconductor International, Apr., 1981, pp. 67, 68, 72, 74, 76, 78, 80, 82, 84, 86 and 88.
Herndon et al. paper entitled, "Inter-Metal Polyimide Insulation for VLSI", Kodak Microelectronics Seminar, Oct. 1979.
Mukai et al., IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, pp. 462-467, Aug. 1980.
Lee et al., Organic Coatings and Plastic Chemistry, vol. 43, pp. 451-457, 1981.

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