Process for forming film in a three-chambered apparatus having t

Details Process for forming film in a three-chambered apparatus having t Process for forming film in a three-chambered apparatus having t

1989-05-31

1991-03-26

Silverman, Stanley

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 451, 118626, 118719, 118725, B05D 306

Patent

active

050027930

ABSTRACT:
A process for the formation of a deposited functional film by separately introducing, into a film-deposition space (A) for forming a deposited film on a substrate, a precursor as the starting material for forming a deposited film which is formed by applying a microwave energy in to a precursor-generating gaseous raw material a decomposition space (B) and an active species which is formed in a decomposition space (C) and which is chemically reactive with the precursor, respectively and chemically reacting them to thereby form a deposited film on the substrate, wherein the inner wall face of a chamber constituting the film-deposition space (A) and the inner wall face of a chamber constituting the decomposition space (C) are coated with a thin film constituted with an element or ingredient constituting the deposited film having a resistance value of 10.sup.6 .OMEGA..cm or more, thereby preventing intrusion of impurities from inner wall material into the deposited film.

REFERENCES:
patent: 4558660 (1985-12-01), Nishizawa et al.
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4702934 (1987-10-01), Ishihara et al.
patent: 4849249 (1989-07-01), Ishihara et al.

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