Semiconductor devices utilizing eutectic masks

Details Semiconductor devices utilizing eutectic masks Semiconductor devices utilizing eutectic masks

1982-07-06

1985-02-19

Edlow, Martin H.

357 65, 357 67, 357 71, 357 86, H01L 2978

Patent

active

045008981

ABSTRACT:
A method is described for making self-aligned doped regions in a body of semiconductor material by means of an in situ eutectic mask formed by the selective removal of one of the phases of a metallic eutectic solidifed as a thin film having a lamellar morphology. The elements of the in situ mask may also be utilized as metallic contact lines or interconnecting metallic stripes of a semiconductor device.

REFERENCES:
patent: 3555664 (1971-01-01), Bingham et al.
patent: 4145700 (1979-03-01), Jambotkar
patent: 4296426 (1981-10-01), Gilles
patent: 4371406 (1983-02-01), Li
Cline, Harvey E., "Directionally Solidified Thin-Film Eutetic Alloys", J. Appl. Phys. 52 (1), Jan. 1981.

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