Process for the growth of structures based on group IV semicondu

Details Process for the growth of structures based on group IV semicondu Process for the growth of structures based on group IV semicondu

1985-06-14

1987-06-02

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 156DIG67, 156DIG80, 156DIG88, 156DIG102, C30B 108

Patent

active

046700862

ABSTRACT:
Single crystal layers of Group IV semiconductor materials, such as silicon, are grown on insulating substrates. The fabrication of this structure is achieved by forming on a single crystal substrate a layer of an insulating material, such as a silicon oxide. A small via hole is produced in the insulating layer to leave a portion of the underlying substrate uncovered. A precursor material is deposited on the insulating layer so that it covers at least a portion of the insulating layer and also contacts the substrate at the via hole. The precursor layer is then formed into a single crystal by inducing growth on the substrate at the via hole and propagating this growth through the precursor layer.

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patent: 3413157 (1968-11-01), Kuiper
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patent: 3928092 (1975-12-01), Ballamy et al.
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patent: 4066482 (1978-01-01), Shaw
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patent: 4323417 (1982-04-01), Lam
patent: 4330363 (1982-05-01), Biegesen et al.
Tamura et al, Si Bridging Epitaxy from Si Windows onto SiO.sub.2 by Q-Switched Ruby Laser Pulse Annealing, Japanese Journal of Applied Physics, vol. 19, No. 1, Jan. 1980, pp. 23-26.

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