Molecular-beam epitaxy system and method including hydrogen trea

Details Molecular-beam epitaxy system and method including hydrogen trea Molecular-beam epitaxy system and method including hydrogen trea

1978-09-29

1980-12-16

Smith, Ronald H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148175, 156614, 156DIG103, 427 86, 427 87, 427 91, 427250, 427294, 4272551, 4272552, B05D 306

Patent

active

042395844

ABSTRACT:
A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs and GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam introduced and, along with the molecular beam, is directed on the substrate during the epitaxy growth such that the presence of the relatively small volume of hydrogen influences the physical surface properties of the epitaxially grown material and therefore the quality of the epitaxy.

REFERENCES:
patent: 3615931 (1971-10-01), Arthur et al.
patent: 3673011 (1972-06-01), Strull
patent: 3765960 (1973-10-01), Boss et al.
patent: 3839084 (1974-10-01), Cho et al.
patent: 3888705 (1975-06-01), Fletcher et al.
patent: 3900363 (1975-08-01), Teraoka et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4058430 (1978-01-01), Manasevit

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