Memory element

Details Memory element Memory element

1993-10-28

1995-10-17

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, 360113, 360119, G11C 1115

Patent

active

054596874

ABSTRACT:
A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and operable with a low magnetic field and room temperature; and the device has a magnetic film part M, current feed lines R and R' for generating magnetic field for information data writing-in, and an information data readout line S of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni--Fe--Co system and a metallic nonmagnetic thin layers such as Cu.

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patent: 3996575 (1976-12-01), Battarel
patent: 4857418 (1989-08-01), Schuetz
patent: 5173873 (1992-12-01), Wu et al.
M. N. Baibich et al.; "Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices"; Physical Review Letters, vol. 61, No. 21, pp. 2472-2474; .COPYRGT.1988 The American Physical Society.
S. S. P. Parkin et al.; "Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattices Structures: Co/Ru, Co/Cr, and Fe/Cr"; Physical Review Letters, vol. 64, No. 19, pp. 2304-2307; .COPYRGT.1990 The American Physical Society.
Teruya Shinjo et al.; "Large Magnetoresistance of Field-Induced Giant Ferrimagnetic Multilayers"; Journal of The Physical Society of Japan, vol. 59, No. 9; Sep., 1990; pp. 3061-3064.
Hiroshi Sakakima et al.; "Low-Field Giant Magnetoresistance in [Ni-Fe-Co/Cu/Co/Cu] Superlattices"; Jpn. J. Appln. Phys. vol. 31 (1992); pp. L484-L486, Part 2, No. 4B, 15 Apr. 1992 (corresponding sustantially to The Institute of Electronics, Information and Communication Engineers, Technical Research Report, MR91-9 in the Specification, p. 2, lines 10-12).

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