Semiconductor memory device having memory cells with enhanced ca

Details Semiconductor memory device having memory cells with enhanced ca Semiconductor memory device having memory cells with enhanced ca

1994-03-29

1995-10-17

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

257300, 257306, H01G 406, H01L 2978

Patent

active

054596858

ABSTRACT:
A semiconductor memory device includes a dielectric layer formed on a conductive thin film layer constituting a shield electrode for effecting element separation in a field area, the dielectric layer connected to a dielectric layer of a capacitor with a lower electrode having part thereof opposite to part of the shield electrode through the dielectric layer, and has an increase in electrode area of a memory cell to be able to attain the high level of integration.

REFERENCES:
patent: 4905064 (1990-02-01), Yabu
patent: 5216267 (1993-06-01), Jin
patent: 5305256 (1994-04-01), Tanigawa
S. Sheffield Eaton et al., High-Speed DRAM Obtained By Abolition Of Boosting Voltage In Word Lines And Decrease Of Amplification Of Sense Amplifiers, pp. 84-88, Nikkei Microdevices, Jun. 1992.

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