Plasma reactor apparatus and method

Details Plasma reactor apparatus and method Plasma reactor apparatus and method

1983-10-03

1984-08-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156345, 204192E, 204298, H01L 21312, B44C 122, C03C 1500, C23F 102

Patent

active

044642237

ABSTRACT:
An improved plasma reactor apparatus and method are disclosed. Improved uniformity of etching and etch rate are achieved in a reactor through the use of electrodes powered at high and low frequencies. In one embodiment of the invention the workpiece which is to be etched rests on an electrode powered at a low AC frequency of about 100 KHz. A second electrode is powered at a high AC frequency of about 13.56 MHz. A third electrode is maintained at ground potential. High and low frequency AC fields acting on a reactant material optimize the dissociation of the reactant material and the ion energy of the plasma generated reactant species.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4349409 (1982-09-01), Shibayama et al.
patent: 4352725 (1982-10-01), Tsukada
patent: 4399016 (1983-08-01), Tsukada et al.

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