Semiconductor device with improved insulation of wiring structur

Details Semiconductor device with improved insulation of wiring structur Semiconductor device with improved insulation of wiring structur

1993-12-20

1995-10-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257383, 257384, 257755, 257758, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

054593549

ABSTRACT:
A semiconductor device comprises a silicon substrate, a gate electrode including a conductive layer formed on the silicon substrate with a gate insulating film disposed between the conductive layer and the silicon substrate and a first insulating layer covering the conductive layer, a conductive region formed in the surface of the silicon substrate at its portion adjacent to the gate electrode, a second insulating layer formed so as to cover the gate electrode and the silicon substrate, a third insulating layer formed so as to cover the second insulating layer, a contact hole formed by etching to penetrate the third and second insulating layers and to reach the conductive region, and a wiring layer formed to cover the third insulating layer and having a contact part extending inside the contact hole, and electrically connect to the conductive region, the second insulating layer being made of a material having a selected ratio of an etching rate relative to an etching rate of a material of the first insulating layer in formation of the contact hole by etching, and sections of the third and second insulating layers exposed to an inner side of the contact hole being flush along the inner side.

REFERENCES:
patent: 4744861 (1988-05-01), Matsunaga et al.
patent: 4782037 (1988-11-01), Tomozawa et al.
patent: 5043790 (1991-08-01), Butler
patent: 5045916 (1991-09-01), Vor et al.
S. M. Sze, Semiconductor Devices Physics and Technology, 1985, pp. 455-456.

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