Structure and fabrication of high capacitance insulated-gate fie

Details Structure and fabrication of high capacitance insulated-gate fie Structure and fabrication of high capacitance insulated-gate fie

1994-09-06

1997-07-01

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, H01L 2976

Patent

active

056441550

ABSTRACT:
A high capacitance field effect transistor for use in an integrated memory circuit is fabricated with an optimized gate electrode and active region overlap, increasing the gate electrode to substrate capacitance thereby minimizing the effect of alpha particle upset. The optimized overlap is accomplished by maximizing the opening in the field oxide layer which defines the active region. In some embodiments, the transistor is also optimized for overall cell layout area.

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