Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-06-22
1995-10-17
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, 257752, 257774, H01L 2700
Patent
active
054593450
ABSTRACT:
An object of the invention is to provide a semiconductor device which has a capacitor having good anti-leak characteristics and good breakdown voltage characteristics and is suitable to high integration. Source/drain regions (25) are formed at a surface of a silicon substrate (31). Interlayer insulating films (1) and (3) having contact holes (1a) and (3a), through which a surfaces of the source/drain region is partially exposed, is formed on the surface of silicon substrate (31). Contact holes (1a) and (3a) are filled with plug layer (9a). A capacitor (20) having a highly dielectric film (15) is formed such that it is electrically connected to source/drain region (25) through plug layer (9a). The interlayer insulating film is formed of a two-layer structure including a silicon oxide film (1) and a silicon nitride film (3). Silicon nitride film (3) and plug layer (9a) have the top surfaces flush with each other.
REFERENCES:
patent: 5272367 (1993-12-01), Dennison et al.
patent: 5335138 (1994-08-01), Sandhu et al.
Kashihara Keiichiro
Okudaira Tomonori
Limanek Robert P.
Mitsubishi Denki & Kabushiki Kaisha
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