Process for producing porous refractory metal layers embedded in

Details Process for producing porous refractory metal layers embedded in Process for producing porous refractory metal layers embedded in

1985-11-13

1988-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG72, 148DIG142, 148DIG164, 148DIG160, 156610, 156614, 357 16, 357 56, 357 88, 437107, 437110, 437111, 437133, 437176, 437915, 437970, H01L 2120, H01L 2174

Patent

active

047585340

ABSTRACT:
A process for fabricating a semiconductor-metal-semiconductor electronic device and the device formed thereby from a semiconductor substrate is described. The substrate forms a first active region of the device. A porous layer of conductive material is deposited on the substrate preferably by molecular beam epitaxy forming a control region. A layer of a semiconductor material epitaxially matched to the substrate is then grown on the layer of conductive material so that the layer of semiconductor material forms a second active region of an electronic device.

REFERENCES:
patent: 3322581 (1967-05-01), Hendrickson et al.
patent: 3375418 (1968-03-01), Garnache et al.
patent: 3394289 (1968-07-01), Lindmayer
patent: 3401449 (1968-09-01), Show
patent: 3424627 (1969-01-01), Michel et al.
patent: 3915765 (1975-10-01), Cho et al.
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4404235 (1983-09-01), Tarng et al.
Solid State Technology, Oct. 1982, "Application of Molecular Beam Epitaxy to III-V, Microwave and High Speed Device Fabrication" pp. 166-169, by J. C. M. Hwang et al.
Silicides for VLSI Application, by S. P. Muravka, Academic Press., pp. 172-175.
Surface Science, 168(1986), 438-497, "Silicon MBE: Recent Developments" by F. Arnaud d'Avitaya et al., (North-Holland, Amsterdam).
Thin Solid Film 93(1982), pp. 77-90, "Epitaxial Silicides" by R. T. Tung et al.
J. Electrochem Soc.; Solid State Science and Technology, vol. 127, No. 7, Jul., 1980, "Lateral Definition of Monocrystalline GaAs Prepared by Molecular Beam Epitaxy", by S. Hiyamigu et al., pp. 1564-1567.
Appl. Phys. Letter, vol. 23, No. 4, Aug. 1973, pp. 201-203, "Molecular Beam Epitaxy of Alternating Metal-Semiconductor Films", by R. Ludeke et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 4, Sept., 1973, p. 1231, Novel Epitaxy", by L. Esaki et al.
"Fabrication and Microwave Performance of the Permeable Base Transistor", by C. O. Bozler, G. D. Alley, R. A. Murphy, D. C. Flanders, W. T. Lindley, IEEE Tech. Dig. Int. Electr. Dev. Mtg., 384, (1979), pp. 384-387.
"Silicon/Metal Silicide Heterostructures Grown by Molecular Beam Epitaxy", by J. C. Bean, J. M. Poate, Applied Phys. Lett., vol. 37, Oct. 1, 1980, pp. 643-646.
"Transistor Action in Si/CoSi.sub.2 Si Heterostructures", by J. C. Hensel, A. F. J. Levi, R. T. Tung and J. M. Gibson, Applied Phys. Lett., vol. 47, Jul. 15, 1985, pp. 151-153.
Rosencher et al., "Transistor Effect in Monolithic Si/CoSi.sub.2 /Si, Epitaxial Structures", Electronic Letters, vol. 20, Sep. 13, 1984, pp. 762-764.

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